Fabrication of InP∕InAs∕InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy
Fabrication of InP∕InAs∕InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy
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DOI：
10.1063/1.2189203
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发表时间：
2006-03
影响因子：
4
通讯作者：
P. Mohan;J. Motohisa;T. Fukui
中科院分区：
文献类型：
--
作者：
P. Mohan;J. Motohisa;T. Fukui
本文报道了用选择区域金属有机物气相外延法生长InP-InAs-InP-InP核-多壳纳米线阵列。核-多壳纳米线被设计为在更高带隙的InP纳米线中容纳应变InAs量子阱层。对纳米线生长方向和异质结形成的精确控制使得能够成功地制造纳米结构，其中所有三个层在没有任何催化剂的帮助下外延生长。生长的纳米线是高度均匀的，垂直取向，并与可控的尺寸周期性地对齐。4K光致发光测量证实了InP（110）侧壁上应变InAs量子阱的形成，对应于光致发光峰的阱宽与计算值吻合良好。
We report the growth of InP∕InAs∕InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. The core-multishell nanowires were designed to accommodate a strained InAs quantum well layer in a higher band gap InP nanowire. The precise control over nanowire growth direction and heterojunction formation enabled the successful fabrication of the nanostructure in which all three layers were epitaxially grown without the assistance of any catalyst. The grown nanowires were highly uniform, vertically oriented, and periodically aligned with controllable dimensions. 4K photoluminescence measurements confirmed the formation of strained InAs quantum well on InP (110) sidewalls and the well widths corresponding to the photoluminescence peaks were in good agreement with calculated values.