Structural and electrical characterization of silicon and silicon oxide films prepared in atmospheric-pressure very high-frequency plasma at low temperatures
Structural and electrical characterization of silicon and silicon oxide films prepared in atmospheric-pressure very high-frequency plasma at low temperatures
复制标题
低温常压甚高频等离子体制备的硅和氧化硅薄膜的结构和电学表征
DOI：
--
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
and K. Yasutake
中科院分区：
文献类型：
--
作者：
H. Kakiuchi;H. Ohmi;and K. Yasutake
