Observation of a precursor in the adsorption of molecular oxygen on Si(100) 2×1
Observation of a precursor in the adsorption of molecular oxygen on Si(100) 2×1
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Si(100) 2×1 上分子氧吸附前驱体的观察
DOI：
10.1103/physrevb.69.155315
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发表时间：
2004
影响因子：
3.7
通讯作者：
G. Dujardin
中科院分区：
文献类型：
--
作者：
G. Comtet;K. Bobrov;L. Hellner;G. Dujardin
利用紫外光电子能谱和光子受激脱附（PSD）技术研究了低温和室温下氧分子在$Si（100）2\ifmmode\times\else\texttimes\fi {}1$表面上的吸附. PSD研究作为氧气暴露和光子能量的函数，揭示了$\mathrm{Si}（100）2\ifmmode\times\else\texttimes\fi{}1$表面上的氧前体。该前体仅在低温（50 K）和非常低的氧气暴露（0.06 L）下观察到。它包括在顶部位置键合到Si表面原子的分子或原子种类。
Molecular oxygen adsorption on the $\mathrm{Si}(100)2\ifmmode\times\else\texttimes\fi{}1$ surface has been studied at low and room temperatures by combining ultraviolet photoemission spectroscopy and photon stimulated desorption (PSD) of ions near the $\mathrm{Si}(2p)$ excitation edge. PSD studies as a function of oxygen exposure and photon energy have revealed an oxygen precursor on the $\mathrm{Si}(100)2\ifmmode\times\else\texttimes\fi{}1$ surface. This precursor has been observed only at low temperature (50 K) and very low oxygen exposures (0.06 L). It consists in a molecular or atomic species bonded to a Si surface atom in a top position.