A.Nagashima, A.Nishimura, J.Yoshino: "Study on initial growth process of MnAs on GaAs(001)-c4x4 by LEED IV and STM"Extended abstracts of The Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors. 9. 121-122 (2003)
A.Nagashima, A.Nishimura, J.Yoshino: "Study on initial growth process of MnAs on GaAs(001)-c4x4 by LEED IV and STM"Extended abstracts of The Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors. 9. 121-122 (2003)
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A.Nagashima、A.Nishimura、J.Yoshino：“通过 LEED IV 和 STM 研究 MnAs 在 GaAs(001)-c4x4 上的初始生长过程”半导体中自旋相关现象的物理与应用研讨会的扩展摘要
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