Direct, etching of GaAs Crystal Excited by a Vacuum Ultraviolet Lamp
Direct, etching of GaAs Crystal Excited by a Vacuum Ultraviolet Lamp
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DOI：
10.1088/0256-307x/20/2/341
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发表时间：
2003-02
影响因子：
3.5
通讯作者：
Zheng-Fu Han;Yan-lin Liao;Hongjun Zhou;Zuo-Hong Jiang;Guo-Bin Zhang;Zhuo-liang Cao
中科院分区：
文献类型：
--
作者：
Zheng-Fu Han;Yan-lin Liao;Hongjun Zhou;Zuo-Hong Jiang;Guo-Bin Zhang;Zhuo-liang Cao
报道了一种由真空紫外空心阴极灯激发的直接刻蚀系统。结果表明，该装置可以将网状图案准确、直接地转移到n型砷化镓晶圆上，与同步辐射直接刻蚀的网状图案相同。
A successful direct, etching system excited by a vacuum ultraviolet hollow-cathode lamp is reported. The result shows that the facility can transfer a mesh pattern exactly and directly to n-type GaAs wafer, which is the same as that direct, etched by synchrotron radiation.