Local structural change in GaCrN grown by radio frequency plasma-assisted molecular-beam epitaxy

Local structural change in GaCrN grown by radio frequency plasma-assisted molecular-beam epitaxy
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DOI:
10.1016/j.jcrysgro.2004.08.128
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发表时间:
2004-12
影响因子:
1.8
通讯作者:
M. Hashimoto;Hidekazu Tanaka;S. Emura;M. Kim;T. Honma;N. Umesaki;Yikai Zhou;S. Hasegawa;H. Asahi
M. Hashimoto;Hidekazu Tanaka;S. Emura;M. Kim;T. Honma;N. Umesaki;Yikai Zhou;S. Hasegawa;H. Asahi
中科院分区:
材料科学3区
文献类型:
--
作者:
M. Hashimoto;Hidekazu Tanaka;S. Emura;M. Kim;T. Honma;N. Umesaki;Yikai Zhou;S. Hasegawa;H. Asahi

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