Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films
Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films
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DOI：
10.1063/1.4887066
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发表时间：
2014-06-30
影响因子：
4
通讯作者：
Balachandran, Uthamalingam
中科院分区：
文献类型：
--
作者：
Hu, Zhongqiang;Ma, Beihai;Balachandran, Uthamalingam
研究了反铁电（AFE）Pb0.96La0.04Zr0.98Ti0.02O3（PLZT 4/98/2）薄膜的储能特性与温度和外加电场的关系。结果表明，PLZT（4/98/2）的可恢复能量密度（U-re）和充放电效率（eta）与温度（从室温到225 ℃）的关系较弱，在室温下，U-re随电场的增大呈线性增大，eta随电场的增大呈指数减小。这些发现定性地解释的基础上的AFE顺电相和AFE铁电相的场致相变的温度诱导转变的动力学。反铁电材料PLZT（4/98/2）具有高的U_re（约61 J/cm ~ 3）和低的漏电流密度（25 ℃和225 ℃时分别约为3.5 × 10 ~（-8）A/cm ~ 2和3.5 × 10 ~（-5）A/cm ~ 2），是一种很有前途的大功率储能材料。(C)2014 AIP Publishing LLC.
The energy storage properties of antiferroelectric (AFE) Pb0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (U-re) and charge-discharge efficiency (eta) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225 degrees C), while U-re increases linearly and eta decreases exponentially with increasing electric field at room temperature. These findings are explained qualitatively on the basis of the kinetics of the temperature-induced transition of AFE-to-paraelectric phase and the field-induced transition of AFE-to-ferroelectric phase, respectively. The high U-re (approximate to 61 J/cm(3)) and low leakage current density (approximate to 3.5 x 10(-8) and 3.5 x 10(-5) A/cm(2) at 25 and 225 degrees C, respectively) indicate that antiferroelectric PLZT (4/98/2) is a promising material for high-power energy storage. (C) 2014 AIP Publishing LLC.