Photorefractive Effects in Sn 2 P 2 S 6
Photorefractive Effects in Sn 2 P 2 S 6
复制标题
Sn 2 P 2 S 6 中的光折变效应
DOI：
10.1007/0-387-34081-5_10
复制
发表时间：
2007
期刊：
影响因子：
--
通讯作者：
P. Günter
中科院分区：
文献类型：
--
作者：
A. Grabar;M. Jazbinšek;A. Shumelyuk;Y. Vysochanskii;G. Montemezzani;P. Günter
次硫代二磷酸锡（Sn_2P_2S_6）是一种在红光和近红外波段具有良好应用前景的光折变材料。Sn_2P_2S_6作为红外敏感光折变材料的主要优点是其高的光束耦合增益和相对快的响应，比常规使用的掺铑光折变材料BaTiO_3快两个数量级。与氧化物铁电体相比，Sn_2P_2S_6晶体具有更窄的禁带宽度（2.3eV）和更高的光折变灵敏度，在530- 8000 nm范围内是透明的。
AbstractTin hypothiodiphosphate (Sn2P2S6) is a very promising material for photorefractive applications in the red and near-infrared wavelength range. The main advantage of Sn2P2S6as an infrared-sensitive photorefractive material is its high beam-coupling gain combined with relatively fast response, about two orders of magnitude faster than in the conventionally used photorefractive material BaTiO3doped with rhodium. Compared to oxide ferroelectrics, which are wide-band-gap dielectrics, Sn2P2S6crystals are characterized by a narrower band gap (2.3 eV) and a higher photorefractive sensitivity, and are transparent in the range of 530– 8000 nm.