Seeding Effects of Sn/a-Ge Island Structures for Low-Temperature Lateral-Growth of a-GeSn on Insulator
Seeding Effects of Sn/a-Ge Island Structures for Low-Temperature Lateral-Growth of a-GeSn on Insulator
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Sn/a-Ge 岛结构对绝缘体上 a-GeSn 低温横向生长的播种效应
DOI：
10.1149/2.0241602jss
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发表时间：
2015
影响因子：
2.2
通讯作者：
T. Sadoh and M. Miyao
中科院分区：
文献类型：
--
作者：
Y. Kai;H. Chikita;R. Matsumura;T. Sadoh and M. Miyao
研究了非晶GeSn（a-GeSn）薄膜低温固相晶化的位置控制。采用两步退火，第一步退火（≤ 250 ℃）使Sn/a-Ge岛晶化，形成晶种，第二步退火（≤ 250 ℃）使晶种横向生长。结果表明，Sn厚度超过Ge厚度的70%是获得具有金刚石结构的GeSn岛（晶粒尺寸> 10 nm）的必要条件。这作为晶种，使得a-GeSn的横向生长超过80 μm。低于塑料基板的软化温度（约300 ℃）的本方法有助于实现先进的柔性电子器件。
Position control of low-temperature solid-phase crystallization in amorphous-GeSn (a-GeSn) films is investigated using a-GeSn films covering Sn/a-Ge stacked islands on insulator. Two-steps annealing has been performed, ie, first-step annealing (∼ 250 C) to crystallize Sn/a-Ge islands for crystalline-seed formation and second-step annealing (≤ 250 C) to proceed lateral-growth from the crystalline-seed. It is found that Sn thickness exceeding∼ 70% of Ge thickness is the essential condition to achieve crystalline GeSn islands (grain size> 10 nm) with the diamond structure. This acts as crystalline-seed enabling the lateral-growth of a-GeSn over 80 μm. The present process below the softening-temperature (∼ 300 C) of plastic substrates facilitates realization of advanced flexible electronics.