Monte Carlo analysis of a hyperthermal silicon deposition process
Monte Carlo analysis of a hyperthermal silicon deposition process
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高温硅沉积过程的蒙特卡罗分析
DOI：
10.1116/1.581089
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
James R Engstrom
中科院分区：
文献类型：
--
作者：
G. Chen;I. Boyd;S. Roadman;James R Engstrom
利用直接模拟蒙特卡罗技术，模拟了氢化硅分子在超声速光载气束中播散形成外延硅薄膜的过程。在此过程中，通过喷嘴孔快速膨胀形成超热准直光束，然后通过掠光器精炼。通过气体动力学方法定量地评估了该过程的基本特征。描述了内部超声速流动的一般特征。通过对前驱体分子撞击基底表面时光束强度、入射动能和入射角度等光束特性的模拟，提供了详细的信息。对薄膜的生长速率进行了量化，并讨论了薄膜的均匀性。与薄膜生长速率的测量值和光束强度的四极杆质谱测量值进行了比较，得到了很好的一致性。广泛的几何和物理参数空间进行了数值检验。…
Deposition of epitaxial silicon thin films through the seeding of silicon hydride molecules in a supersonic beam of light carrier gas is modeled using the direct simulation Monte Carlo technique. In this process, a hyperthermal collimated beam is formed by rapid expansion through a nozzle orifice and then refined through a skimmer. The fundamental characteristics of the process are evaluated quantitatively through a gas dynamics approach. General features of the internal supersonic flows are described. Detailed information is provided by the simulations on the beam properties, such as beam intensity, incident kinetic energy and angle as the precursor molecules impact the substrate surface. The thin film growth rates are quantified and film uniformity is discussed. Good agreement is achieved on the comparisons with measurements of the film growth rate and the quadrupole mass spectrometric measurements of the beam intensity. A wide range of geometric and physical parameter space is examined numerically. The...