Promising high-thermal-conductivity substrate material for high-power electronic device: silicon nitride ceramics
Promising high-thermal-conductivity substrate material for high-power electronic device: silicon nitride ceramics
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DOI：
10.1007/s12598-020-01376-7
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发表时间：
2020-02-19
期刊：
影响因子：
8.8
通讯作者：
An, Di
中科院分区：
文献类型：
--
作者：
Hu, Feng;Xie, Zhi-Peng;An, Di
高导热氮化硅陶瓷基板因其优异的机械性能和高导热系数，适合复杂、极端环境下的应用，是下一代大功率电子器件不可或缺的部件。在这里，我们概述了高导热氮化硅陶瓷制备的最新进展。首先阐述影响氮化硅陶瓷导热系数的因素。其中包括晶格氧和晶界相，以及晶格的氧含量，这是主要的影响因素。然后提出了高导热氮化硅陶瓷的制备方法。详细介绍了近年来高导热氮化硅的制备工作，包括所用原材料、成型和烧结工艺。尽管已经取得了巨大进步，但开发高质量、低成本的制造工艺仍然是一个挑战。尽管如此，我们相信高导热氮化硅衬底有望在下一代高功率电子器件中获得大规模实际应用。
High-thermal-conductivity silicon nitride ceramic substrates are indispensable components for next-generation high-power electronic devices because of their excellent mechanical properties and high thermal conductivities, which make them suitable for applications in complex and extreme environments. Here, we present an overview of the recent developments in the preparation of high-thermal-conductivity silicon nitride ceramics. First, the factors affecting the thermal conductivity of silicon nitride ceramics are described. These include lattice oxygen and grain boundary phases, as well the oxygen content of the crystal lattice, which is the main influencing factor. Then, the methods to prepare high-thermal-conductivity silicon nitride ceramics are presented. Recent work on the preparation of high-thermal-conductivity silicon nitride is described in detail, including the raw materials used and the forming and sintering processes. Although great progress has been made, the development of a high-quality, low-cost fabrication process remains a challenge. Nevertheless, we believe that high-thermal-conductivity silicon nitride substrates are promising for massive practical applications in the next generation of high-power electronic devices.