The Effect of an Organic Base in Chemically Amplified Resist on Patterning Characteristics Using KrF Lithography
The Effect of an Organic Base in Chemically Amplified Resist on Patterning Characteristics Using KrF Lithography
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化学放大抗蚀剂中有机碱对 KrF 光刻图案化特性的影响
DOI：
10.1143/jjap.33.7023
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发表时间：
1994
影响因子：
1.5
通讯作者：
Tadahito Matsuda Tadahito Matsuda
中科院分区：
文献类型：
--
作者：
Y. Kawai;Akihiro Otaka;Akinobu Tanaka Akinobu Tanaka;Tadahito Matsuda Tadahito Matsuda
研制了一种由SEPR化学放大（CA）正阻剂和n -甲基吡咯烷酮（NMP）有机碱组成的KrF准分子激光光刻用阻剂体系。利用KrF步进器形成的0.30µm l&s图，研究了等离子体化学气相沉积二氧化硅（P-CVD SiO2）、低压CVD氮化硅（LP-CVD Si3N4）和反应溅射氮化钛（TiN）衬底膜的污染效应，以及8 ppb氨气条件下空气污染的影响。结果表明，新型抗蚀剂系统降低了基片膜的影响，同时也减少了空气污染。新的抗蚀剂系统使我们能够在任何基材上形成精细的图案，并且在没有涂层和底涂层的情况下获得超过一小时的曝光后延迟。
A new resist system composed of an SEPR chemically amplified (CA) positive resist and an N-methyl pyrrolidone (NMP) organic base has been developed for KrF excimer laser lithography. Using 0.30-µ m l&s patterns formed with KrF stepper, we studied the effect of contamination from substrate films of plasma chemical vapor deposition silicon dioxide (P-CVD SiO2), low pressure CVD silicon nitride (LP-CVD Si3N4) and reactive sputtered titanium nitride (TiN), and of airborne contamination under the condition of an 8-ppb of ammonia. The results clarify the new resist system reduces the effect of substrate film as well as airborne contamination. The new resist system enables us to form fine patterns on any substrate and attains more than one hour post-exposure delay without overcoat and undercoat films.