Impact of Total Ionizing Dose on the Electromagnetic Susceptibility of a Single Bipolar Transistor
Impact of Total Ionizing Dose on the Electromagnetic Susceptibility of a Single Bipolar Transistor
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DOI：
10.1109/radecs.2011.6131307
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发表时间：
2011-09
影响因子：
1.8
通讯作者：
A. Doridant;S. Jarrix;J. Raoult;A. Blain;N. Chatry;P. Calvel;P. Hoffmann;L. Dusseau
中科院分区：
文献类型：
--
作者：
A. Doridant;S. Jarrix;J. Raoult;A. Blain;N. Chatry;P. Calvel;P. Hoffmann;L. Dusseau
空间或军用电子元件受到电磁场和总电离剂量的影响。本文研究了分立式低频晶体管在总电离剂量沉积下的电磁敏感度。研究了共发射极结构中未辐照和辐照晶体管的电磁敏感度。对100 MHz-1.5 GHz干扰敏感性的变化表明了近场电磁波和总电离剂量之间的协同效应。详细介绍了导致信号输出变化的物理机制。
Space or military electronic components are subject to both electromagnetic fields and total ionizing dose. This paper deals with the electromagnetic susceptibility of a discrete low frequency transistor subject to total ionizing dose deposition. The electromagnetic susceptibility is investigated on both non-irradiated and irradiated transistors mounted in common emitter configuration. The change in susceptibility to 100 MHz–1.5 GHz interferences lights up a synergy effect between near field electromagnetic waves and total ionizing dose. Physical mechanisms leading to changes in signal output are detailed.