A Novel Method to Grow Thallium Bromide Single Crystal and Crystal Habit Discussion
A Novel Method to Grow Thallium Bromide Single Crystal and Crystal Habit Discussion
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DOI：
10.1021/cg800580f
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发表时间：
2009-09
影响因子：
3.8
通讯作者：
D. Zhou;L. Quan;Xiaoyan Chen;Shijin Yu;Chuan Wang;Zhiping Zheng;S. Gong
中科院分区：
文献类型：
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作者：
D. Zhou;L. Quan;Xiaoyan Chen;Shijin Yu;Chuan Wang;Zhiping Zheng;S. Gong
介绍了一种制备辐射探测器用溴化铊(TlBr2)单晶的新方法。晶体生长采用简化的电动梯度法(EDG)，不需要机械设备的运动。得到了直径为8 mm、择优取向为[110]方向的TlBr晶体。用X射线衍射仪对所得晶体进行了表征，并对生长过程进行了分析。摇摆曲线表征表明晶体中存在应变。采用二维X射线衍射法对样品的取向分布进行了研究。通过取向分布以及安瓶直径对晶体质量的影响，证明了晶体生长中轴向导热的重要性。通过对实验结果和晶格结构的分析，讨论了晶体习性。
A novel melt-based method has been introduced to prepare thallium bromide (TlBr) single crystal for radiation detector use. Crystal growth was conducted by a simplified electro dynamic gradient (EDG) process with no motion of mechanical equipment. TlBr crystal of 8 mm diameter, preferentially oriented in the [110] direction, was obtained. X-ray diffraction (XRD) patterns are used to evaluate the obtained crystal and analyze the growth procedure. Rocking curve characterization shows strain in the crystal. Step-by-step two-dimensional X-ray diffraction has been taken to study the orientation distribution of the sample. The importance of heat conduction along the axial direction during crystal growth is proven by orientation distribution together with the influence of ampule diameter on crystal quality. Crystal habit is discussed by analyzing experimental results and crystal lattice structure.