Enhancement of effective electromechanical coupling factor by mass loading in layered SAW device structures

Enhancement of effective electromechanical coupling factor by mass loading in layered SAW device structures
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DOI：
10.1109/fcs.2015.7138870
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发表时间：
2015-04
期刊：
2015 Joint Conference of the IEEE International Frequency Control Symposium & the European Frequency and Time Forum
影响因子：
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通讯作者：
Gongbin Tang;Tao Han;Akihiko Teshigahara;T. Iwaki;K. Hashimoto
Gongbin Tang;Tao Han;Akihiko Teshigahara;T. Iwaki;K. Hashimoto
中科院分区：
其他
文献类型：
--
作者：
Gongbin Tang;Tao Han;Akihiko Teshigahara;T. Iwaki;K. Hashimoto

文献摘要

相似文献

本文介绍了急剧增强的Ke 2的质量加载在分层SAW器件结构，如ScAlN膜/Si衬底。结果表明，这种现象是明显的，即使当一个非晶SiO2膜沉积在上表面的温度补偿。这种增强是由SAW能量限制到放置IDT的ScAlN层的顶表面引起的。当采用其它电极和/或衬底材料时，也发现这种Ke 2增强。
This paper describes drastic enhancement of Ke2 by mass loading in layered SAW device structures such as the ScAlN film/Si substrate. It is shown that this phenomenon is obvious even when an amorphous SiO2 film is deposited on the top surface for temperature compensation. This enhancement is caused by SAW energy confinement to the top surface of the ScAlN layer where the IDT is placed. This Ke2 enhancement is also found when other electrode and/or substrate materials are employed.