Impacts of noble gas dilution on Si film structure prepared by atmospheric-pressure plasma enhanced chemical transport
Impacts of noble gas dilution on Si film structure prepared by atmospheric-pressure plasma enhanced chemical transport
复制标题
稀有气体稀释对常压等离子体增强化学输运制备Si薄膜结构的影响
DOI：
10.1088/0022-3727/41/19/195208
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
K. Yasutake
中科院分区：
文献类型：
--
作者：
H. Ohmi;K. Kishimoto;H. Kakiuchi;K. Yasutake
为了控制常压等离子体增强化学输运（APECT）方法制备的多晶硅薄膜的结构，我们研究了稀有气体（He或Ar）稀释对薄膜结构和等离子体特性的影响。稀有气体稀释 APECT 方法中的沉积速率主要取决于工艺气体混合物中的氢气浓度。用稀有气体稀释会极大地改变硅薄膜的形貌。当 减小时，环状 RHEED 图案变得强烈斑点，表明外延 Si 生长。发现不仅可以通过改变稀有气体元素来改变膜结构。
To control the structure of poly-Si films prepared by the atmospheric-pressure plasma enhanced chemical transport (APECT) method, we have investigated the effects of noble gas (He or Ar) dilution on film structure and plasma characteristics. The deposition rate in the noble gas dilution APECT method depends mainly on the hydrogen concentration in the process gas mixture. Diluting with noble gas changes the Si film morphology dramatically. When is decreased, the ring-like RHEED pattern becomes strongly spotty, indicating the epitaxial Si growth. It is found that the film structure can be modified by varying not only but also the noble gas element.