Si/XeF2 etching: Temperature dependence
Si/XeF2 etching: Temperature dependence
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Si/XeF2 蚀刻：温度依赖性
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
Hcw Herman Beijerinck
中科院分区：
文献类型：
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作者：
M. Vugts;G. Verschueren;M. Eurlings;L. Hermans;Hcw Herman Beijerinck
在分子束装置中定量研究了Si(100)/XeF2蚀刻反应的温度依赖性。在样品温度为150 K时，初始反应概率达到一致，之后XeF2在表面凝结，阻碍了蚀刻过程。随着温度的升高，XeF2的反应概率从150 K时的100%下降到400 K时的20%，但在600 K以上的温度下，它再次增加到900 K时的45%。在一个简单的反应方案中，低温下的高蚀刻速率可以用XeF2 -前驱体来解释，其解吸活化能为32±4 meV。此外，高温下腐蚀速率的增加是由SiF2的解吸引起的，活化能为260±30 meV。用热解吸光谱测量了SiFx反应层的稳态氟含量，在300 K时达到了最大的5.5层。随着温度的升高，它在700k以上减少到亚单层覆盖。温度取决于…
The temperature dependence of the Si(100)/XeF2 etch reaction is studied quantitatively in a molecular beam setup. At a sample temperature of 150 K the reaction probability reaches unity initially, after which the XeF2 condenses on the surface and blocks the etching process. For increasing temperatures the XeF2 reaction probability initially decreases from 100% at 150 K down to 20% around 400 K, but for temperatures above 600 K it increases again up to 45% at 900 K. In a simple reaction scheme the high etch rate at low temperatures is explained by a XeF2‐precursor, with an activation energy for desorption of 32±4 meV. Furthermore the increased etch rate at high temperatures is explained by the desorption of SiF2 with an activation energy of 260±30 meV. The steady‐state fluorine content of the SiFx reaction layer, measured using thermal desorption spectroscopy, reaches a maximum of 5.5 monolayers at 300 K. For increasing temperatures it decreases to a submonolayer coverage above 700 K. The temperature depen...