Growth and characterisation of high quality MBE grown InNx Sb1–x
Growth and characterisation of high quality MBE grown InNx Sb1–x
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高质量 MBE 生长的 InNx Sb1–x 的生长和表征
DOI：
10.1002/pssr.200701035
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
Christopher McConville
中科院分区：
文献类型：
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作者：
P. H. Jefferson;L. Buckle;David Walker;T. Veal;S. Coomber;Pam A. Thomas;Tim Ashley;Christopher McConville
本文介绍了等离子体辅助分子束外延生长InSb稀氮化物合金的生长、结构和光学特性。通过高分辨率X射线衍射仪对这些薄膜进行了表征，结果表明这些薄膜具有高结晶质量和高达0.68%的含氮量。傅里叶变换红外吸收测量表明，吸收边的位置是带隙缩小(由于氮掺入和带隙重整化)和莫斯-伯斯坦能带填充的竞争效应的结果。
The growth, structural and optical characterisation of dilute nitride alloys of InSb grown by plasma‐assisted molecular beam epitaxy is presented. The layers were characterised by high‐resolution X‐ray diffraction indicating high crystalline quality and nitrogen incorporations up to 0.68%. Fourier‐transform infrared absorption measurements reveal the position of the absorption edge to be a result of the competing effects of bandgap reduction (due to nitrogen incorporation and bandgap renormalisation) and Moss–Burstein band filling.