High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio
High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio
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DOI：
10.1143/jjap.45.8639
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发表时间：
2006-11-01
期刊：
影响因子：
--
通讯作者：
Bandoh, Akira
中科院分区：
文献类型：
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作者：
Imura, Masataka;Nakano, Kiyotaka;Bandoh, Akira
采用高温金属有机物气相外延技术在c面蓝宝石衬底上生长了高质量的AlN薄膜。获得了具有原子级平坦表面的约9 μ m厚的AlN层而没有裂纹。在生长过程中的V/III比的多重调制导致在生长过渡期的位错的数量减少。发现AlN层的位错密度小于3 × 10（8）cm（-2）。
High-quality AlN layers were grown on c-plane sapphire substrates by high-temperature metal-organic vapor phase epitaxy. AlN layers of about 9 mu m in thickness with an atomically flat surface were obtained without cracks. Multiple modulation of the V/III ratio during growth led to a reduction in the number of dislocations during the growth transition period. The dislocation density of the AlN layers was found to be less than 3 x 10(8) cm(-2).