A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate
A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate
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DOI：
10.1088/1674-4926/33/5/054003
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发表时间：
2012-05
影响因子：
5.1
通讯作者：
Wang Zhongjian;Chen Xinhong;Xia Chao;Xu Dawei;Cao Duo;Song Zhaorui;Yu Yuehui;Shen Dashen
中科院分区：
文献类型：
--
作者：
Wang Zhongjian;Chen Xinhong;Xia Chao;Xu Dawei;Cao Duo;Song Zhaorui;Yu Yuehui;Shen Dashen
用改进的场氧化物（FOX）和双场极板在薄SOI上研究了680 V LDMOS。FOX结构是通过“氧化-蚀刻-氧化”工艺形成的，该工艺的形成时间短得多，并且具有较低的突出轮廓。多晶硅场板延伸到FOX和一个长金属场板，以提高比导通电阻。为了获得均匀的横向电场，采用了一种优化的线性梯度掺杂漂移区植入。利用1.5 m顶硅和3 m埋氧化层的SimBond SOI晶圆，成功设计并实现了兼容CMOS的SOI LDMOS工艺。断态击穿电压达到680 V，比导通电阻为8.2 mm 2。
A 680 V LDMOS on a thin SOI with an improved field oxide (FOX) and dual field plate was studied experimentally. The FOX structure was formed by an "oxidation-etch-oxidation" process, which took much less time to form, and had a low protrusion profile. A polysilicon field plate extended to the FOX and a long metal field plate was used to improve the specific on-resistance. An optimized drift region implant for linear-gradient doping was adopted to achieve a uniform lateral electric field. Using a SimBond SOI wafer with a 1.5 m top silicon and a 3 m buried oxide layer, CMOS compatible SOI LDMOS processes are designed and implemented successfully. The off-state breakdown voltage reached 680 V, and the specific on-resistance was 8.2 mm 2 .