Impact of bilayer structures on the surface passivation quality of high‐rate‐sputtered hydrogenated amorphous silicon for silicon heterojunction solar cells
Impact of bilayer structures on the surface passivation quality of high‐rate‐sputtered hydrogenated amorphous silicon for silicon heterojunction solar cells
复制标题
双层结构对硅异质结太阳能电池用高速率溅射氢化非晶硅表面钝化质量的影响
DOI：
10.1002/pip.3298
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Miyajima Shinsuke
中科院分区：
文献类型：
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作者：
Bin Mohd Zulkifly Faris Akira;Shiratori Yuta;Nakada Kazuyoshi;Miyajima Shinsuke
研究了射频对靶溅射(RF-FTS)两步沉积技术制备的本征氢化非晶硅(i-a-Si：H)薄膜的晶硅表面钝化效应。在两步沉积技术中，I-a-Si：H在低溅射功率条件下沉积后，在高溅射功率条件下又沉积了i-a-Si：H层。与传统的单步沉积技术相比，两步沉积技术显著提高了i-a-Si：H的钝化质量。在较低的溅射功率下仅沉积0.5 nm厚的i-a-Si：H薄膜就能抑制对单晶硅表面的初始溅射损伤。平均沉积速率也达到了14.1 nm/min。采用两步法沉积I-a-Si：H钝化层的非织构硅异质结太阳电池的转换效率为17.4%(VoC=0.679 V，Jsc=35.0 mA/cm~2，FF=0.732)。
Crystalline silicon surface passivation effect of intrinsic hydrogenated amorphous silicon (i‐a‐Si:H) films deposited by radio‐frequency facing target sputtering (RF‐FTS) using a two‐step deposition technique was investigated. In the two‐step deposition technique, an i‐a‐Si:H layer was deposited at a high sputtering power condition after the deposition of i‐a‐Si:H at a low sputtering power condition. The two‐step deposition technique drastically improved the passivation quality of i‐a‐Si:H compared with a conventional single‐step deposition technique. Only 0.5‐nm‐thick i‐a‐Si:H deposited at a low sputtering power suppresses the initial sputtering damage to the crystalline silicon surface. A high average deposition rate of 14.1 nm/min was also achieved. A non‐textured silicon heterojunction solar cell using an i‐a‐Si:H passivation layer deposited by the two‐step method shows a conversion efficiency of 17.4% (Voc= 0.679 V,Jsc= 35.0 mA/cm2,FF= 0.732).