Growth behavior of nonpolar ZnO on M-plane and R-plane sapphire by metalorganic vapor phase epitaxy
Growth behavior of nonpolar ZnO on M-plane and R-plane sapphire by metalorganic vapor phase epitaxy
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DOI：
10.1143/jjap.44.7919
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发表时间：
2005-11-01
期刊：
影响因子：
--
通讯作者：
Fujita, S
中科院分区：
文献类型：
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作者：
Moriyama, T;Fujita, S
M面和A面ZnO薄膜分别生长在M面和R面蓝宝石衬底上。在高生长温度和/或 VI/II 比率下，ZnO 沿垂直于 c 轴的方向生长。另一方面，在低生长温度和/或VI/II比下，ZnO沿c轴方向生长。在非常低的 VI/II 比条件下，在 R 面蓝宝石上获得了非常光滑的 ZnO 薄膜。这是因为沿 c 轴生长的强烈趋势加速了横向生长。相反，在M面蓝宝石上，在该生长条件下形成了与表面法线倾斜30度的C面ZnO纳米棒。
M-plane and A-plane ZnO films were grown on M-plane and R-plane sapphire substrates respectively. At high growth temperatures and/or VI/II ratios, ZnO grew along the direction perpendicular to the c-axis. On the other hand, at low growth temperatures and/or VI/II ratios, ZnO grew along the c-axis direction. A very smooth ZnO film was achieved on R-plane sapphire under a very low VI/II ratio condition. This was because the lateral growth was accelerated by a very strong tendency of growing along the c-axis. In contrast, on M-plane sapphire, C-plane ZnO nanorods tilted by 30 degrees from the normal of the surface were formed under this growth condition.