Quantum Dots in Carbon Nanotubes
Quantum Dots in Carbon Nanotubes
复制标题
碳纳米管中的量子点
DOI：
10.1143/jjap.39.7053
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发表时间：
2000
影响因子：
1.5
通讯作者：
Y. Aoyagi
中科院分区：
文献类型：
--
作者：
K. Ishibashi;Tetsuya Ida;Masaki Suzuki;K. Tsukagoshi;Y. Aoyagi
一种在单个单壁碳纳米管上制造电触点的技术已经开发出来，并且电测量在4.2开尔文以下进行。低温下的电输运性质基本表征为具有明显的库仑封锁效应和零维受限能级的量子点。研究了纳米管量子点的微波响应，进一步表征了纳米管量子点。讨论了在样品中实现量子点的隧道势垒形成的方式和位置。微波辐照对量子点的影响是源漏极电压的经典调制，并考虑了与输运相关的各种能量和时间尺度。
A technology to fabricate electrical contacts on individual single-wall carbon nanotubes has been developed, and electrical measurements are carried out below 4.2 Kelvin. The electrical transport property at low temperatures has basically been characterized as a quantum dot with a pronounced Coulomb blockade effect and zero dimensional confined levels. A microwave response to the nanotube quantum dot is also studied to further characterize the quantum dot. It is discussed how and where the tunnel barrier is formed to realize the quantum dot in a sample. The microwave irradiation effect on the quantum dot turns out to be a classical modulation of the source drain voltage, and is discussed considering the various energy and time scales associated with the transport.