Role of Molecular Sieves in the CVD Synthesis of Large‐Area 2D MoTe2

Role of Molecular Sieves in the CVD Synthesis of Large‐Area 2D MoTe2
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DOI:
10.1002/adfm.201603491
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发表时间:
2017
影响因子:
19
通讯作者:
Lin Zhou;Kai Xu;Kai Xu;Ahmad Zubair;Xu Zhang;Fangping Ouyang;Fangping Ouyang;T. Palacios;M. Dresselhaus;Yongfeng Li;J. Kong
Lin Zhou;Kai Xu;Kai Xu;Ahmad Zubair;Xu Zhang;Fangping Ouyang;Fangping Ouyang;T. Palacios;M. Dresselhaus;Yongfeng Li;J. Kong
中科院分区:
材料科学1区
文献类型:
--
作者:
Lin Zhou;Kai Xu;Kai Xu;Ahmad Zubair;Xu Zhang;Fangping Ouyang;Fangping Ouyang;T. Palacios;M. Dresselhaus;Yongfeng Li;J. Kong

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在SiO2/Si衬底上合成具有所需相的高质量2D MoTe 2对其多种应用至关重要。在生长期间,Te与衬底Si的副反应倾向于发生,导致SiTe和Si 2 Te 3,从而导致不能获得MoTe 2。发现分子筛可以吸附碲化硅副产物,消除化学气相沉积合成MoTe 2过程中副反应的影响。在分子筛的帮助下,可以从MoOx前体生长几层1 T ′ MoTe 2。在同一片SiO2/Si衬底上合成的纯1 T ′ MoTe 2和纯2 H MoTe 2区域可以通过使用重叠的几何结构来获得。该策略提供了一种可控合成具有所需相的MoTe 2的新方法,并且可以推广到其他碲基层状材料的合成。
The synthesis of high‐quality 2D MoTe2 with a desired phase on SiO2/Si substrate is crucial to its diverse applications. A side reaction of Te with the substrate Si leading to SiTe and Si2Te3 tends to happen during growth, resulting in the failure to obtain MoTe2. It has been found that molecular sieves can adsorb the silicon telluride byproducts and eliminate the influence of the side reaction during the chemical vapor deposition synthesis of MoTe2. With the help of molecular sieves, few‐layer 1T′ MoTe2 can be grown from the MoOx precursor. Pure 1T′ MoTe2 and 2H MoTe2 regions in centimeter‐sized areas synthesized on the same piece of SiO2/Si substrate can be obtained by using an overlapped geometry. The strategy provides a new method to controllably synthesize MoTe2 with desired phases and can be generalizable to the synthesis of other tellurium‐based layered materials.