Katsutoshi Saeki: "CMOS Implementation of a Multiple-Valued Memory Cell Using A-Shaped Negative-Resistance Devices"IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. Vol.J87-A, no.4. (2004)
Katsutoshi Saeki: "CMOS Implementation of a Multiple-Valued Memory Cell Using A-Shaped Negative-Resistance Devices"IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. Vol.J87-A, no.4. (2004)
复制标题
Katsutoshi Saeki:“使用 A 形负阻器件实现多值存储单元的 CMOS 实现”IEICE 电子、通信和计算机科学基础汇刊。
DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
中科院分区:
文献类型:
--
作者: