Operation of single-flux-quantum logic cells based on all-NbN integrated circuit technology
Operation of single-flux-quantum logic cells based on all-NbN integrated circuit technology
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基于全NbN集成电路技术的单通量量子逻辑单元的运行
DOI：
10.1109/isec.2013.6604278
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Zhen Wang
中科院分区：
文献类型：
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作者：
H. Terai;K. Makise;Zhen Wang
我们研制了在MgO（100）衬底上外延生长的高质量NbN/AlN/NbN三层结构的NbN基SFQ电路。SFQ逻辑单元，如JTL，DC/SFQ转换器，电压驱动器，脉冲分配器，TFF，和CB的设计，通过设置临界电流密度JC为2.5 kA/cm 2。我们成功地证明了所有设计的SFQ单元的正确操作，但是允许操作的JC范围非常窄，为设计值的70%左右。电路模拟显示，TFF单元需要65%至115%的JC范围才能正确操作，而DC/SFQ转换器在JC超过70%时无法操作。
We developed NbN-based SFQ circuits consisting of high-quality epitaxial NbN/AlN/NbN trilayer grown on MgO (100) substrate. The SFQ logic cells such as JTL, DC/SFQ converter, voltage driver, pulse splitter, TFF, and CB were designed by setting the critical current density JC at 2.5 kA/cm2. We succeeded in demonstrating correct operations of all the designed SFQ cells, but the JC range allowing the operation was quite narrow as around 70% for the designed value. The circuit simulation revealed that the TFF cell requires the JC range from 65% to 115% for the correct operation, while the DC/SFQ converter was not operational for the JC of more than 70%.