Metal-insulator-semiconductor optoelectronic fibres
Metal-insulator-semiconductor optoelectronic fibres
复制标题
DOI：
10.1038/nature02937
复制
发表时间：
2004-10-14
期刊：
影响因子：
64.8
通讯作者：
Fink, Y
中科院分区：
文献类型：
--
作者：
Bayindir, M;Sorin, F;Fink, Y
导体、半导体和绝缘体的组合具有明确的几何形状和规定的长度尺度，同时形成紧密的界面，在大多数功能电子和光电器件中是必不可少的。这些通常使用各种精细的基于晶片的工艺来生产，其允许小特征，但限于平面几何形状和有限的覆盖区域（1-3）。相比之下，从预成型的卷轴或管中拉制光纤的技术更简单，并且产生具有良好控制的几何形状和良好的光学传输特性的高度均匀的光纤的延长长度（4）。到目前为止，这种技术仅限于特定的材料（5-7）和较大的特征（8-12）。在这里，我们报告的设计，制造和表征的纤维制成的导电，半导体和绝缘材料的密切接触，并在各种几何形状。我们证明，这种方法可以用来构建一个可调谐的光纤光电探测器，包括一个非晶半导体芯金属微丝接触，并包围一个圆柱壳谐振光学腔。这种光纤对沿其整个长度（数十米）的照明沿着是敏感的，因此形成维度为1的光电检测元件。我们还构建了一个网格，这样的纤维，可以识别照明点的位置。这种类型的光电探测器阵列的优点在于，与由零维光电探测元件制成的探测器阵列的常规阶数N-2相比，它只需要阶数N的元件。
The combination of conductors, semiconductors and insulators with well-defined geometries and at prescribed length scales, while forming intimate interfaces, is essential in most functional electronic and optoelectronic devices. These are typically produced using a variety of elaborate wafer-based processes, which allow for small features, but are restricted to planar geometries and limited coverage area(1-3). In contrast, the technique of fibre drawing from a preformed reel or tube is simpler and yields extended lengths of highly uniform fibres with well-controlled geometries and good optical transport characteristics(4). So far, this technique has been restricted to particular materials(5-7) and larger features(8-12). Here we report on the design, fabrication and characterization of fibres made of conducting, semiconducting and insulating materials in intimate contact and in a variety of geometries. We demonstrate that this approach can be used to construct a tunable fibre photodetector comprising an amorphous semiconductor core contacted by metallic microwires, and surrounded by a cylindrical-shell resonant optical cavity. Such a fibre is sensitive to illumination along its entire length ( tens of meters), thus forming a photodetecting element of dimensionality one. We also construct a grid of such fibres that can identify the location of an illumination point. The advantage of this type of photodetector array is that it needs a number of elements of only order N, in contrast to the conventional order N-2 for detector arrays made of photodetecting elements of dimensionality zero.