Cationic point defects in CuGaSe2 from a structural perspective
Cationic point defects in CuGaSe2 from a structural perspective
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从结构角度看 CuGaSe2 中的阳离子点缺陷
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
H. Schock
中科院分区：
文献类型：
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作者：
C. Stephan;T. Scherb;C. Kaufmann;S. Schorr;H. Schock
黄铜矿半导体通过保持晶体结构而对化学计量的偏差显示出大的公差。这样的偏差总是会导致结构不均匀性和电荷失配，从而影响材料性能。我们研究了阳离子点缺陷的类型和浓度的铜贫CuGaSe 2粉末的中子和光子的互补使用。结果表明，这种贫铜宽禁带半导体中存在的主要缺陷是铜空位（VCu）和间隙位置上的镓（Gai）。后者可以解释为什么定制高效的CuGaSe 2太阳能电池是一项比以前预期的更具挑战性的任务。
The chalcopyrite semiconductors show large tolerances to deviations from stoichiometry by keeping the crystal structure. Such deviations always cause structural inhomogeneities and charge mismatches which influence the material properties. We studied the type and concentration of cationic point defects on Cu-poor CuGaSe2 powders by the complementary use of neutrons and photons. It is demonstrated that the main existing defects in this Cu-poor wide gap semiconductor are copper-vacancies (VCu) and gallium on interstitial sites (Gai). The latter may explain why tailoring a highly efficient CuGaSe2 solar cell is an even more challenging task than previously expected.