High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer
High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer
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DOI：
10.1063/1.5091714
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发表时间：
2019-04-08
影响因子：
4
通讯作者：
Toko, K.
中科院分区：
文献类型：
--
作者：
Nishida, T.;Moto, K.;Toko, K.
几十年来，在廉价的衬底上合成高质量的GaAs薄膜的研究一直在继续，目的是开发一种既能实现高效率又能实现低成本的太阳能电池。在这里，我们将铝诱导层交换形成的玻璃上的大颗粒Ge层应用于用于制备GaAs膜的外延模板。在520℃的温度下，从Ge种子层外延生长的GaAs膜成为具有高(111)择优取向的伪单晶(晶粒度为100微米)。由于晶体尺寸较大，在1.0V的偏压下，内量子效率达到70%，接近于在单晶Ge晶片上同时形成的GaAs膜，是玻璃上低温合成的最高的GaAs膜。通过层交换形成的Ge种子层的应用为开发基于低成本玻璃衬底的III-V化合物半导体高效薄膜太阳能电池提供了良好的潜力。由AIP出版公司授权出版。
Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a large-grained Ge layer on glass, formed by Al-induced layer exchange, to an epitaxial template for a GaAs film. The GaAs film, grown epitaxially from the Ge seed layer at 520 degrees C, became a pseudosingle crystal (grain size > 100 mu m) with high (111) orientation. Reflecting the large grain size, the internal quantum efficiency reached 70% under a bias voltage of 1.0 V. This value approaches that of a simultaneously formed GaAs film on a single-crystal Ge wafer and is the highest for a GaAs film synthesized on glass at a low temperature. The application of a Ge seed layer formed by layer exchange offers excellent potential to develop high-efficiency thin-film solar cells with III-V compound semiconductors based on low-cost glass substrates. Published under license by AIP Publishing.