Imaging Dielectric Breakdown in Valence Change Memory
Imaging Dielectric Breakdown in Valence Change Memory
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DOI：
10.1002/adfm.202102313
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发表时间：
2021-09-30
影响因子：
19
通讯作者：
Regan, Brian C.
中科院分区：
文献类型：
--
作者：
Hubbard, William A.;Lodico, Jared J.;Regan, Brian C.
介电击穿（DB）控制着微电子器件的故障，并且越来越多地控制着微电子器件的功能。标准成像技术根据物理结构产生对比度，很难将这种电子过程可视化。在这里，在原位扫描透射电子显微镜（STEM）电子束感应电流（EBIC）成像的DB在Pt/HfO 2/Ti的价态变化存储器件的报告。STEM EBIC成像直接可视化DB的电子特征，即电导率和电场的局部变化，具有高空间分辨率和良好的对比度。DB被观察到进行通过两个不同的结构串联排列：一个挥发性的，“软”的电子注入创建的灯丝;和一个非挥发性的，“硬”的灯丝由氧空位聚集。这张图在“软”和“硬”DB之间进行了物理区分，同时容纳了“渐进”DB，其中硬丝和软丝的相对长度可以在连续体上变化。
Dielectric breakdown (DB) controls the failure, and increasingly the function, of microelectronic devices. Standard imaging techniques, which generate contrast based on physical structure, struggle to visualize this electronic process. Here in situ scanning transmission electron microscopy (STEM) electron beam-induced current (EBIC) imaging of DB in Pt/HfO2/Ti valence change memory devices is reported. STEM EBIC imaging directly visualizes the electronic signatures of DB, namely local changes in the conductivity and in the electric field, with high spatial resolution and good contrast. DB is observed to proceed through two distinct structures arranged in series: a volatile, "soft" filament created by electron injection; and a non-volatile, "hard" filament created by oxygen-vacancy aggregation. This picture makes a physical distinction between "soft" and "hard" DB, while at the same time accommodating "progressive" DB, where the relative lengths of the hard and soft filaments can change on a continuum.