Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel
Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel
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DOI：
10.1088/0268-1242/26/3/034007
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发表时间：
2011-02
影响因子：
1.9
通讯作者：
Sung‐Min Yoon;Shinhyuk Yang;C. Byun;Soon-Won Jung;M. Ryu;S. Park;Byeonghoon Kim;Himchan Oh;Chi-Sun Hwang;B. Yu
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文献类型：
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作者：
Sung‐Min Yoon;Shinhyuk Yang;C. Byun;Soon-Won Jung;M. Ryu;S. Park;Byeonghoon Kim;Himchan Oh;Chi-Sun Hwang;B. Yu
采用有机铁电栅绝缘体和氧化物半导体有源沟道的有机-无机混合型非易失性存储器薄膜晶体管，是一种具有低成本和高性能的存储器件解决方案，可嵌入到下一代柔性和透明电子器件中。本文讨论了该器件的结构设计、工艺优化和存储阵列集成等关键问题。讨论了有前景的可行应用和有待解决的技术问题。
Organic–inorganic hybrid-type nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting active channel are a very promising solution to the memory devices having both features of low-cost and high-performance, which are embeddable into the next-generation flexible and transparent electronics. In this paper, we discuss some important issues for this proposed device, such as device structure design, process optimization and memory array integration. Promising feasible applications and remaining technology issues to solve were also discussed.