Copper related diffusion phenomena in germanium and silicon
Copper related diffusion phenomena in germanium and silicon
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锗和硅中与铜相关的扩散现象
DOI：
10.1016/j.mssp.2004.06.001
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发表时间：
2004
影响因子：
4.1
通讯作者：
H. Bracht
中科院分区：
文献类型：
--
作者：
H. Bracht
本文涉及 Cu 在 Ge 和 Si 中的扩散相关特性。在Ge中，Cu更倾向于占据替代晶格位置，而Si中的Cu主要溶解在间隙位置。晶格位点占用的这种差异也反映在扩散行为中。虽然 Cu 在 Ge 中的扩散是根据解离机制准确描述的，其中涉及用于将 Cu 从间隙位置转变为取代位点的 Ge 空位，但 Cu 在 Si 中的扩散主要由直接间隙机制介导。 Cu 在 Ge 和 Si 中的特定扩散行为及其电子特性强烈影响其他扩散相关现象，例如 Cu 的沉淀和吸杂。详细了解后一过程对于将电子设备在加工过程中的污染保持在无害水平具有根本的技术意义。本文对 Ge 和 Si 中 Cu 的各个方面进行了综述，这是以前和最近实验的结果。
This paper concerns diffusion related properties of Cu in Ge and Si. In Ge, Cu prefers to occupy a substitutional lattice site whereas Cu in Si is mainly dissolved on an interstitial position. This difference in the lattice site occupancy is also reflected in the diffusion behaviour. Whereas Cu diffusion in Ge is accurately described on the basis of the dissociative mechanism, which involves Ge vacancies for the conversion of Cu from interstitial to substitutional sites, the diffusion of Cu in Si is mainly mediated by the direct interstitial mechanism. The specific diffusion behaviour of Cu in Ge and Si as well as its electronic properties strongly affect other diffusion related phenomena such as the precipitation and gettering of Cu. Detailed understanding of the latter processes are of fundamental technological significance to keep the contamination of electronic devices during processing to a harmless level. The various aspects of Cu in Ge and Si, which are the result of former and recent experiments, are reviewed in this paper.