Absorption dichroism of monolayer 1T′-MoTe2 in visible range
Absorption dichroism of monolayer 1T′-MoTe2 in visible range
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DOI:
10.1088/2053-1583/3/3/031010
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发表时间:
2016-09-01
期刊:
影响因子:
5.5
通讯作者:
Lee, Young Hee
中科院分区:
文献类型:
--
作者:
Han, Gang Hee;Keum, Dong Hoon;Lee, Young Hee
Among various transition metal dichalcogenides, MoTe2 has drawn attention due to its capability of robust phase engineering between semiconducting (2H) and semi-metallic distorted octahedral (1T') phase. In particular, 1T'-MoTe2 has been predicted to have intriguing physics such as quantum spin Hall. insulator, large magnetoresistance, and superconductivity. Recent progress showed weak antilocalization behavior in 1T'-MoTe2 which is the one of representative characteristics in topological insulator. Here, we grow centimeter-scale monolayer 1T'-MoTe2 on SiO2/Si substrate via chemical vapordeposition and demonstrate dichroism in visible range. Ribbon-like 1T'-MoTe2 flakes were initially nucleated randomly on SiO2 substrate and at a later stage merged to form a continuous monolayer film over the entire substrate. Each flake revealed one dimensional Mo-Mo dimerization feature and anisotropic absorption behavior in visible range (400-600 nm). This allowed us to detect the grain boundary due to stark contrast difference among flakes in different orientations.