Structural and optical investigation of plasma deposited silicon carbon alloys: Insights on Si-C bond configuration using spectroscopic ellipsometry
Structural and optical investigation of plasma deposited silicon carbon alloys: Insights on Si-C bond configuration using spectroscopic ellipsometry
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DOI：
10.1063/1.1899758
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发表时间：
2005-04
影响因子：
3.2
通讯作者：
M. Losurdo;M. Giangregorio;P. Capezzuto;G. Bruno;F. Giorgis
中科院分区：
文献类型：
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作者：
M. Losurdo;M. Giangregorio;P. Capezzuto;G. Bruno;F. Giorgis
采用SiF 4-CH 4 −H2射频等离子体，通过等离子体增强化学气相沉积法制备了非晶（a-Si 1 − xCx：H）和微晶（μ c-Si 1 −xCx：H）薄膜。改变气体流速以沉积具有不同碳含量和微结构的存款膜。用红外/拉曼光谱和椭圆偏振光谱在1.5-5.0 eV能量范围内研究了样品的微观结构和光学性质。椭偏光谱已被分析的四面体模型结合Bruggeman有效介质近似，以确定薄膜的微观结构和硅碳键的配置。研究了碳含量和微结构对Si-C键构型和薄膜光学性能的影响。结果表明，薄膜的光学性能和禁带宽度不仅与碳含量有关，还与Si-C键构型和微晶度有关。薄膜由Si中心的Si-Si 4 −vCv（v=0-3）Si中心的四面体组成。
Amorphous (a–Si1−xCx:H) and microcrystalline (μc–Si1−xCx:H) thin films have been deposited by plasma-enhanced chemical-vapor deposition using SiF4–CH4−H2 rf plasmas. Gas flow rates have been varied to deposit films with different carbon content and microstructure. The microstructure and optical properties have been investigated by IR/Raman spectroscopy and by spectroscopic ellipsometry in the energy range of 1.5–5.0 eV. Ellipsometric spectra have been analyzed in terms of the tetrahedron model combined with the Bruggeman effective-medium approximation to determine the film microstructure and silicon–carbon-bond configurations. Correlation between Si–C bond configurations and optical properties of films has been studied as a function of carbon content and microstructure. It is found that the optical properties and the band gap value depend not only on the carbon content, but also on the Si–C bond configuration and microcrystallinity. The films consist of Si-centered Si–Si4−vCv(v=0–3) Si-centered tetrahedra...