Band offset and structure of SrTiO3 /Si(001) heterojunctions
Band offset and structure of SrTiO3 /Si(001) heterojunctions
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DOI：
10.1116/1.1365132
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发表时间：
2001-05
期刊：
影响因子：
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通讯作者：
S. Chambers;Yong Liang;Z. Yu;R. Droopad;J. Ramdani
中科院分区：
文献类型：
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作者：
S. Chambers;Yong Liang;Z. Yu;R. Droopad;J. Ramdani
我们测量了外延SrTiO_3/Si（001）异质结的能带偏移和材料特性，包括n和p衬底，有和没有界面SiO_2层。从生长室到光电发射系统的通过空气转移导致显著的表面羟基化和粗糙化，尽管SrTiO 3-Si界面未受干扰。尽管表面羟基化，但Si（001）上20埃厚的外延SrTiO 3的结构质量与体SrTiO 3（001）的结构质量相当。我们发现的价带和导带偏移量分别为2.1和2.0eV，独立的掺杂类型和SiO2的存在。这些结果与基于电子亲和力规则的理论能带偏移预测一致，并通过界面偶极的存在进行了修改。
We have measured the band offsets and materials properties of epitaxial SrTiO3/Si(001) heterojunctions for both n and p substrates, with and without an interfacial SiO2 layer. The through-air transfer from the growth chamber to the photoemission system results in significant surface hydroxylation and roughening, although the SrTiO3–Si interface is undisturbed. Surface hydroxylation notwithstanding, the structural quality of 20 A thick epitaxial SrTiO3 on Si(001) is comparable to that of bulk SrTiO3(001). We find valence and conduction band offsets of ∼2.1 and ∼0.0 eV, respectively, independent of doping type and the presence of SiO2. These results are consistent with theoretical band offset predictions based on the electron affinity rule, modified by the presence of an interface dipole.