Large-Area Synthesis of Highly Crystalline WSe2 Mono layers and Device Applications
Large-Area Synthesis of Highly Crystalline WSe2 Mono layers and Device Applications
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DOI：
10.1021/nn405719x
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发表时间：
2014-01-01
期刊：
影响因子：
17.1
通讯作者：
Li, Lain-Jong
中科院分区：
文献类型：
--
作者：
Huang, Jing-Kai;Pu, Jiang;Li, Lain-Jong
单层过渡金属二硫属化物由于其在谷电子学、柔性和低功耗电子以及光电器件中的潜力而近年来引起了广泛关注。最近的报告证明了通过氧化钼的硫化可以生长大尺寸二维MoS2层。然而，过渡金属硒化物单层的生长仍然是一个挑战。在此，我们报道，在反应室中引入氢气有助于激活 WO3 的硒化，从而可以成功生长大尺寸的 WSe2 单层薄片或薄膜。使用离子凝胶作为电介质的基于WSe2单层的顶栅场效应晶体管表现出双极性特性，其中空穴和电子迁移率值分别高达90和7 cm(2)/Vs。这些薄膜可以转移到任意基材上，这可能会激发研究人员探索其特性和应用的努力。基于WSe2薄膜的电阻负载逆变器，增益接近13，进一步证明了其对逻辑电路集成的适用性。
The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics, and optoelectronic devices. Recent reports have demonstrated the growth of large-size two-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of a transition metal selenide monolayer has still been a challenge. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large size WSe2 monolayer flakes or thin films can be successfully grown. The top-gated field-effect transistors based on WSe2 monolayers using ionic gels as the dielectrics exhibit ambipolar characteristics, where the hole and electron mobility values are up to 90 and 7 cm(2)/Vs, respectively. These films can be transferred onto arbitrary substrates, which may inspire research efforts to explore their properties and applications. The resistor-loaded inverter based on a WSe2 film, with a gain of similar to 13, further demonstrates its applicability for logic-circuit integrations.