Step-Controlled Epitaxial Growth of SiC
Step-Controlled Epitaxial Growth of SiC
复制标题
SiC 的阶跃控制外延生长
DOI：
10.1557/proc-162-397
复制
发表时间：
1989
期刊：
影响因子：
--
通讯作者：
H. Nishino
中科院分区：
文献类型：
--
作者：
Hiroyuki Matsunani;T. Ueda;H. Nishino
在1500℃或更低的温度下，在6H-SiC衬底上进行了气相外延(VPE)生长。在取向良好的(0001)面上，生长出了具有双定位晶界的孪晶3C-SiC，而在非取向的(0001)面上，生长出了表面非常光滑的单晶6H-SiC。与以前报道的6H-SiCVPE生长温度相比，该温度降低了300℃以上。通过引入磁场，增加了表面台阶的密度。晶体生长是通过台阶的侧向生长进行的。然而，在非取向衬底上生长的层的表面形貌随衬底的偏向和极性而变化。用蚀坑观察、光致发光(PL)测量和反射高能电子衍射对生长的薄膜进行了表征。在此基础上，讨论了6H-碳化硅在(0001)Si和(0001)C面上的生长机制。对P型掺杂进行了尝试，并对其电学和发光性能进行了测试。对PN结的制作也进行了研究。
Vapor phase epitaxial(VPE) growth of SIC on 6H-SiC substrates has been carried out at 1500°C or below. On well-oriented (0001)Si faces, twin crystalline 3C-SiC with double positioning boundaries was grown, whereas on off-oriented (0001)Si faces, single crystalline 6H-SiC was grown with a very smooth surface. This temperature is more than 300°C lower in comparison with that for 6H-SiC VPE growth reported previously. By the introduction of offorientation, the density of surface steps is increased. Crystal growth occurs through lateral growth from the steps. The surface morphology of grown layers on off-oriented substrates, however, varied with the offdirection and the polarity of substrates. Grown layers are characterized by etch-pits observation, photoluminescence(PL) measurements and reflection high energy electron diffraction. On the basis of these experimental results, the growth mechanism on (0001)Si and (0001)C faces of 6H-SiC is discussed. P-type doping is tried, and electrical and PL properties are examined. Pn junction fabrication is also studied.