Polarization fields in nitride-based quantum dots grown on nonpolar substrates
Polarization fields in nitride-based quantum dots grown on nonpolar substrates
复制标题
在非极性基底上生长的氮化物基量子点的偏振场
DOI：
10.1103/physrevb.79.081401
复制
发表时间：
2009
影响因子：
3.7
通讯作者：
E. O’Reilly
中科院分区：
文献类型：
--
作者：
S. Schulz;Arnaud Berube;E. O’Reilly
我们使用表面积分方法来确定在非极性衬底上生长的氮化物基量子点（QD）的极化电位。文献中关于压电常数${e}_{15}$的符号存在不确定性。我们发现只有负的e_{15}$才能降低非极性GaN/AlN量子点的静电内建场。我们的非极性InN/GaN量子点的分析表明，一个显着的内置字段仍然在这些结构。我们计算出，尽管降低了极化电位，基态电子和空穴可以保持空间分离的GaN/AlN量子点。
We use a surface-integral method to determine the polarization potential in nitride-based quantum dots (QDs) grown on a nonpolar substrate. There is uncertainty in the literature regarding the sign of the piezoelectric constant ${e}_{15}$. We find that only a negative ${e}_{15}$ can give the reduced electrostatic built-in field found experimentally in nonpolar GaN/AlN QDs. Our analysis of nonpolar InN/GaN QDs indicates that a significant built-in field remains in these structures. We calculate that despite the reduced polarization potential, ground-state electrons and holes can remain spatially separated in GaN/AlN QDs.