Perovskite CH3NH3PbI3-xBrx Single Crystals with Charge-Carrier Lifetimes Exceeding 260 μs.
Perovskite CH3NH3PbI3-xBrx Single Crystals with Charge-Carrier Lifetimes Exceeding 260 μs.
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载流子寿命超过260 μs的Percent CH_3 NH_3 PbI_3-xBrx单晶
DOI:
10.1021/acsami.7b01696
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发表时间:
2017-04
影响因子:
9.5
通讯作者:
Fengying Zhang;Bin Yang;Xin Mao;Ruixia Yang;Lei Jiang;Yajuan Li;J. Xiong;Yang Yang-Yang;Rongxing He;Weiqiao Deng;Ke-li Han
中科院分区:
文献类型:
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作者:
Fengying Zhang;Bin Yang;Xin Mao;Ruixia Yang;Lei Jiang;Yajuan Li;J. Xiong;Yang Yang-Yang;Rongxing He;Weiqiao Deng;Ke-li Han
The long carrier lifetimes in perovskite single crystals have drawn significant attention recently on account of their irreplaceable contribution to high-performance photovoltaic (PV) devices. Herein, the optical and optoelectronic properties of CH3NH3PbI3 and CH3NH3PbI3-xBrx (with five different contents of Br doped) single crystals were investigated. Notably, a superior carrier lifetime of up to 262 μs was observed in the CH3NH3PbI3-xBrx (I/Br = 10:1 in the precursor) single-crystal PV device under 1 sun illumination, which is two times longer than that in the CH3NH3PbI3 single crystal. Further study confirmed that the ultralong carrier lifetime was ascribed to the integrated superiority derived from both the low trap-state density and high charge-injection efficiency of the device interface. On this basis, appropriate incorporation of Br is useful in the design of better PV devices.