Recognition of the Atomic Terminating Layer in Perovskite Oxide Substrates by Reflection High Energy Electron Diffraction
Recognition of the Atomic Terminating Layer in Perovskite Oxide Substrates by Reflection High Energy Electron Diffraction
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反射高能电子衍射识别钙钛矿氧化物基底中的原子终止层
DOI:
10.1143/jjap.42.l389
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发表时间:
2003
影响因子:
1.5
通讯作者:
H. Koinuma
中科院分区:
文献类型:
--
作者:
R. Takahashi;Y. Matsumoto;H. Koinuma
The chemical surface structure in perovskite oxides has been identified by monitoring the oscillation intensity of reflection high energy electron diffraction patterns during initial growth of MO (M=Sr, Ba) films on the perovskite substrate. This successful analysis technique is demonstrated for the film growth on A and B-site oxides terminated ABO3 substrates. Epitaxial growth of MO thin films is dominated by chemical interaction between the growing lattice and the underlying atomic layer to follow the crystal habit of forming a more stable layer unit cell. This simple technique can be used as a substitute to relevant physical techniques such as coaxial impact-collision ion scattering spectroscopy and friction force microscopy that are currently used techniques to determine the termination layer.