CMOS CIRCUITS FOR PERIPHERAL CIRCUIT INTEGRATED POLY-SI TFT LCD FABRICATED AT LOW-TEMPERATURE BELOW 600-DEGREES-C
CMOS CIRCUITS FOR PERIPHERAL CIRCUIT INTEGRATED POLY-SI TFT LCD FABRICATED AT LOW-TEMPERATURE BELOW 600-DEGREES-C
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DOI：
10.1109/16.81621
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发表时间：
1991-06-01
影响因子：
3.1
通讯作者：
KONISHI, N
中科院分区：
文献类型：
--
作者：
TAKABATAKE, M;OHWADA, J;KONISHI, N
用于多晶硅 TFT LCD 集成外围驱动电路的 CMOS 移位寄存器、缓冲器和灰度表示电路是在低于 600 摄氏度的低温下在玻璃基板上制造的。 CMOS移位寄存器的最大工作频率为1.25 MHz。 10级CMOS移位寄存器在时钟频率46.8kHz、电源电压20V下的总功耗为10μW，比10级nMOS移位寄存器小三个数量级。 CMOS缓冲器的上升和下降时间与通道宽度的倒数成正比，并且灰度表示电路的写入时间t(w)与行存储器电容成正比。
CMOS shift registers, buffers, and gray-scale representation circuits for integrated peripheral drive circuits of poly-Si TFT LCD's were fabricated at low temperature below 600-degrees-C on a glass substrate. The maximum operation frequency of the CMOS shift register was 1.25 MHz. The total power consumption of the 10-stage CMOS shift registers at a clock frequency of 46.8 kHz and a power supply voltage of 20 V was 10-mu-W, which is three orders of magnitudes smaller than that of the 10-stage nMOS shift registers. The rise and fall times of the CMOS buffers were proportional to the inverse of the channel width, and the write time t(w) of the gray-scale representation circuits was proportional to the line memory capacitance.