CMOS-compatible, athermal silicon ring modulators clad with titanium dioxide
CMOS-compatible, athermal silicon ring modulators clad with titanium dioxide
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DOI：
10.1364/oe.21.013958
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发表时间：
2013-06-17
期刊：
影响因子：
3.8
通讯作者：
Yoo, S. J. B.
中科院分区：
文献类型：
--
作者：
Djordjevic, Stevan S.;Shang, Kuanping;Yoo, S. J. B.
我们介绍了无热纳米光子硅环调制器的设计、制造和表征。无热化方法利用具有负热光系数的非晶二氧化钛 (a-TiO2) 外包层来补偿硅芯的热光贡献。我们开发了一种新的 CMOS 兼容制造工艺，涉及高密度和低损耗 a-TiO2 的低温射频磁控溅射，可以承受后续的高温 CMOS 工艺。具有 275 nm 宽肋状波导且包覆 a-TiO2 的硅环谐振器表现出接近完全的无热化和中等的光学损耗。微谐振器调制器的小信号测试显示出高消光比和千兆赫带宽。 (C) 2013 美国光学学会
We present the design, fabrication and characterization of athermal nano-photonic silicon ring modulators. The athermalization method employs compensation of the silicon core thermo-optic contribution with that from the amorphous titanium dioxide (a-TiO2) overcladding with a negative thermo-optic coefficient. We developed a new CMOS-compatible fabrication process involving low temperature RF magnetron sputtering of high-density and low-loss a-TiO2 that can withstand subsequent elevated-temperature CMOS processes. Silicon ring resonators with 275 nm wide rib waveguide clad with a-TiO2 showed near complete athermalization and moderate optical losses. Small-signal testing of the micro-resonator modulators showed high extinction ratio and gigahertz bandwidth. (C) 2013 Optical Society of America