Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator
Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator
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绝缘体上非晶 SiGe 薄膜的金属诱导固相结晶
DOI：
10.1143/jjap.42.1933
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发表时间：
2003
影响因子：
1.5
通讯作者：
M. Miyao
中科院分区：
文献类型：
--
作者：
H. Kanno;I. Tsunoda;A. Kenjo;T. Sadoh;S. Yamaguchi;M. Miyao
研究了金属诱导a-Si_（1-x）Gex（0 ≤x ≤1）在SiO_2上的低温（≤550 ℃）晶化。观察到Ge分数依赖的晶体生长。在低Ge组分的情况下，平面生长占主导地位，其速度随着Ge组分从0增加到20%而提高了80%。这产生了具有大晶粒（18 µm）的无应变多晶硅硅锗。另一方面，在中间Ge分数（40-60%）的情况下，枝晶生长成为主导。通过优化生长条件（x：0.4，退火：450°C，20 h），获得了非常尖锐的针状晶体（宽度：0.05 µm，长度：10 µm）。这些新型绝缘体上的多晶SiGe薄膜可用于系统级显示器、三维超大规模集成电路和新型一维布线。
The metal-induced low-temperature (≤550°C) crystallization of a-Si1-xGex (0 ≤x ≤1) on SiO2 has been investigated. A Ge-fraction-dependent crystal growth was observed. In the case of a low-Ge fraction, plane growth dominated, the velocity of which was enhanced by 80% with increasing Ge fraction from 0 to 20%. This produced strain-free poly-SiGe with large grains (18 µm). On the other hand, dendrite growth became dominant in the case of intermediate Ge fractions (40–60%). By optimizing the growth conditions (x: 0.4, annealing: 450°C, 20 h), very sharp needlelike crystals (width: 0.05 µm, length: 10 µm) were obtained. These new polycrystalline SiGe films on insulator should be used for system-in-display, three-dimensional ultra large-scall integrated circuits, and novel one-dimensional wires.