Effects of Increased Acoustic Phonon Deformation Potential and Surface Roughness Scattering on Quasi-Ballistic Transport in Ultrascaled Si-MOSFETs
Effects of Increased Acoustic Phonon Deformation Potential and Surface Roughness Scattering on Quasi-Ballistic Transport in Ultrascaled Si-MOSFETs
复制标题
声学声子变形势和表面粗糙度散射的增加对超大规模 Si-MOSFET 中准弹道输运的影响
DOI：
10.7567/jjap.53.114301
复制
发表时间：
2014
影响因子：
1.5
通讯作者：
and Matsuto Ogawa
中科院分区：
文献类型：
--
作者：
Shunsuke Koba;Ryoma Ishida;Yuko Kubota;Hideaki Tsuchiya;Yoshinari Kamakura;Nobuya Mori;and Matsuto Ogawa
