Band structure properties of novel BxGa1-xP alloys for silicon integration
Band structure properties of novel BxGa1-xP alloys for silicon integration
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DOI：
10.1063/1.3630018
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发表时间：
2011-09-15
影响因子：
3.2
通讯作者：
Stolz, Wolfgang
中科院分区：
文献类型：
--
作者：
Hossain, Nadir;Hosea, T. J. C.;Stolz, Wolfgang
我们已经生长和研究了基于BxGa 1-xP的新型III-V合金的能带结构特性。这些层被用作应变补偿层的晶格匹配集成的新型直接带隙镓（NASP）量子阱激光器在硅上。实验和理论研究揭示了应变BxGa 1-xP层的直接和间接带隙的依赖性生长在硅上作为硼的组合物的函数，从中我们得到的独立的BxGa 1-xP的属性。对于高达6%的硼分数，我们发现最低（间接）带隙的弯曲参数为-6.2 +/-0.2 eV。高的结晶质量和有前途的光学材料性能被证明并应用于单片集成的Ga（NAsP）/（BGa）P多量子阱异质结构在（001）硅衬底上。我们的研究结果表明，新的（BGa）P层是合适的应变补偿的目的，这铺平了道路走向商业解决方案的长期稳定的激光二极管在硅衬底上的单片集成。(C)2011年美国物理学会。[doi：10.1063/1.3630018]
We have grown and investigated the band-structure properties of novel III-V alloys based upon BxGa1-xP. These layers are utilized as strain-compensating layers for the lattice-matched integration of novel direct bandgap Ga(NAsP) quantum well lasers on silicon. Experimental and theoretical studies reveal the dependence of the direct and indirect band gaps for strained BxGa1-xP layers grown on silicon as a function of Boron composition from which we derive the properties of free-standing BxGa1-xP. For Boron fractions up to 6%, we find that the bowing parameter for the lowest (indirect) band gap is -6.2 +/- 0.2 eV. High crystalline quality and promising optical material properties are demonstrated and applied to monolithically integrated Ga(NAsP)/(BGa) P multi-quantum well heterostructures on (001) silicon substrates. Our results show that novel (BGa) P layers are suitable for strain compensation purposes, which pave the way towards a commercial solution for the monolithic integration of long term stable laser diodes on silicon substrates. (C) 2011 American Institute of Physics. [doi:10.1063/1.3630018]