Competitive emissions of InAs (QDs)/GaInAsP/InP grown by GSMBE
Competitive emissions of InAs (QDs)/GaInAsP/InP grown by GSMBE
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GSMBE 生长的 InAs (QD)/GaInAsP/InP 的竞争发射
DOI：
10.1007/s00339-014-8947-5
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发表时间：
2015
影响因子：
2.7
通讯作者：
Zhang Bo
中科院分区：
文献类型：
--
作者：
Yuan Xiaowen;Wang Qi;Sun Liaoxin;Li Senlin;Chen C. Q.;Luo X. D.;Zhang Bo
本文研究了气态源分子束外延InP衬底上生长的InAs(量子点)/GaInAsP的光学性质。通过测量和分析InAs(量子点)/GaInAsP/InP在不同温度和不同激发功率下的光致发光光谱，验证了各发射的来源。研究发现，随着温度的升高，GaInAsP润湿层的发射强度先减小(T<150℃)，然后从160 K增大到室温。通过分析三种不同尺寸的量子点样品的实验结果，证实了InAs量子点和GaInAsP润湿层之间存在竞争发射。
In this letter, the optical properties of InAs (QDs)/GaInAsP on InP substrate grown by gas source molecular beam epitaxy are investigated. By measuring and analyzing the photoluminescence spectra of InAs (QDs)/GaInAsP/InP at different temperatures and excitation powers, the origin of each emission is verified. And it is found that, with the temperature increasing, the emission intensity of GaInAsP wetting layers decreases firstly (T < 150 K) and then increases from 160 K to room temperature. By analyzing the experimental results of three samples with different QDs’ sizes, a competitive emission between InAs QDs and GaInAsP wetting layers is confirmed.