Functionalized Graphene as an Ultrathin Seed Layer for the Atomic Layer Deposition of Conformal High-k Dielectrics on Graphene
Functionalized Graphene as an Ultrathin Seed Layer for the Atomic Layer Deposition of Conformal High-k Dielectrics on Graphene
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DOI：
10.1021/am4039807
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发表时间：
2013-11-27
影响因子：
9.5
通讯作者：
Cho, Byung Jin
中科院分区：
文献类型：
--
作者：
Shin, Woo Cheol;Bong, Jae Hoon;Cho, Byung Jin
超薄功能化石墨烯（FG）被证明是一种有效的种子层的原子层沉积（ALD）的高k石墨烯，通过化学气相沉积（CVD）合成。FG层是使用低密度氧等离子体处理CVD石墨烯来制备的，并使用拉曼光谱和X射线光电子能谱（XPS）进行表征。虽然在石墨烯上的ALD沉积导致不均匀且粗糙的电介质沉积，但是由FG晶种层提供的丰富的氧物质使得能够在石墨烯沟道的整个区域上进行保形且无针孔的电介质膜沉积。当与具有Al种子层的共处理电容器相比时，用FG种子Al 2 O3制造的金属-绝缘体-石墨烯（CVD）电容器表现出上级缩放能力和低漏电流。
Ultrathin functionalized graphene (FG) is demonstrated to work as an effective seed layer for the atomic layer deposition (ALD) of high-k dielectrics on graphene that is synthesized via chemical vapor deposition (CVD). The FG layer is prepared using a low-density oxygen plasma treatment on CVD graphene and is characterized using Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). While the ALD deposition on graphene results in a patchy and rough dielectric deposition, the abundant oxygen species provided by the FG seed layer enable conformal and pinhole-free dielectric film deposition over the entire area of the graphene channel. The metal-insulator-graphene (MIG) capacitors fabricated with the FG-seeded Al2O3 exhibit superior scaling capabilities with low leakage currents when compared with the co-processed capacitors with Al seed layers.