Stress in Al-Sc Interconnection Layers
Stress in Al-Sc Interconnection Layers
复制标题
Al-Sc 互连层中的应力
DOI:
10.1143/jjap.32.l1394
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发表时间:
1993
影响因子:
1.5
通讯作者:
Tadao Ueda
中科院分区:
文献类型:
--
作者:
T. Hara;N. Hosoda;Shozo Nagano;Tadao Ueda
Stress has been measured in Al-Sc layers with different Sc compositions. Stress at room temperature after sintering at 450°C decreases with the increase of Sc concentration and reaches 62 MPa at Sc concentration of 0.3%. This stress level is much lower than of 327 MPa in the Al-1%Si-0.5%Cu layer. The mean time of failure is 6.3×106 h in an Al-0.15%Sc layer. This time is seven times longer than that in the Al-1%Si-0.5%Cu layer. Therefore, Al-Sc is a promising prospect as an interconnection layer for quarter-micron devices.