n+ InGaAs/nGaAs heterojunction Schottky diodes with low barriers controlled by band offset and doping level
n+ InGaAs/nGaAs heterojunction Schottky diodes with low barriers controlled by band offset and doping level
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n InGaAs/nGaAs 异质结肖特基二极管，具有由能带偏移和掺杂水平控制的低势垒
DOI：
10.1116/1.583011
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发表时间：
1985
期刊：
影响因子：
--
通讯作者：
P. Kirchner
中科院分区：
文献类型：
--
作者：
A. Kleinsasser;J. Woodall;G. Pettit;T. Jackson;J. Y. Tang;P. Kirchner
我们已经制造和测量低势垒（30-150 meV）肖特基二极管使用n +InGaAs/InGaAs赝晶结构与高达1.5%的晶格失配。在4至200 K温度下的I-V测量显示整流行为，并表明从隧穿到电子发射的传输机制。的传输特性和势垒高度的测定表明，带偏移主要是在导带。势垒高度随着In浓度的增加而增加，这与基于先前实验数据的能带计算一致。
We have fabricated and measured low barrier (30–150 meV) Schottky diodes using n +InGaAs/nGaAs pseudomorphic structures with up to 1.5% lattice mismatch. The I‐Vmeasurements at temperatures from 4 to 200 K show rectifying behavior and indicate transport mechanisms which range from tunneling to thermionic emission. The transport properties and barrier height determinations indicate that the band offset is predominantly in the conduction band. The barrier height increases with In concentration, which is consistent with band calculations based on previous experimental data.