The transport properties of InAs nanowires: an introduction to MnAs/InAs heterojunction nanowires for spintronics
The transport properties of InAs nanowires: an introduction to MnAs/InAs heterojunction nanowires for spintronics
复制标题
DOI：
10.1088/1361-6463/ab88e8
复制
发表时间：
2020-04
期刊：
影响因子：
--
通讯作者：
P. Uredat;M. T. Elm;R. Horiguchi;P. Klar;S. Hara
中科院分区：
文献类型：
--
作者：
P. Uredat;M. T. Elm;R. Horiguchi;P. Klar;S. Hara
半导体纳米线作为纳米级电子和光电器件的构建块，如场效应晶体管，气体传感器和发光二极管，具有很大的兴趣。由于其独特的结构性质，具有高的表面积与体积比和准一维性，它们表现出有趣的新的光学和电子性质。由于器件的性能在很大程度上取决于载流子密度、载流子寿命和载流子迁移率，因此对准一维纳米结构中的输运性质的详细了解是必不可少的。特别地，InAs纳米线对于高性能晶体管、热电器件、自旋电子学和量子计算设备具有相当大的兴趣，因为它们不仅表现出高载流子迁移率，而且还表现出强的自旋轨道耦合和大的g因子。此外，在低温下的表面积累层可以发生在InAs纳米线表面处理后，导致有趣的介观输运现象，如普遍的电导波动或弱反定域。然而，对于纳米尺度的磁电子或自旋电子应用，具有可调节的铁磁性质的纳米线是期望的。由于居里温度高于300 K的稀磁半导体和半导体纳米线的生长仍然具有挑战性，MnAs/InAs异质结纳米线，其中铁磁纳米团簇嵌入在半导体基质中，可能是一个有前途的替代方案。此外，这种异质结纳米线已被报道表现出巨大的磁阻效应以及相对长的自旋弛豫时间。
Semiconducting nanowires hold great interest as building blocks for nanoscaled electronic and optoelectronic devices, such as field-effect transistors, gas sensors, and light-emitting diodes. Due to their unique structural properties, with a high surface-to-volume ratio and quasi-one-dimensionality, they exhibit interesting new optical and electronic properties. As device performance strongly depends on charge carrier density, carrier lifetime, and carrier mobility, detailed knowledge of the transport properties in quasi-one-dimensional nanostructures is essential. In particular, InAs nanowires are of considerable interest for high-performance transistors, thermoelectrics, spintronics, and quantum computing devices as they not only exhibit high carrier mobility but also a strong spin–orbit coupling and a large g-factor. Furthermore, at low temperatures a surface accumulation layer can occur in InAs nanowires after surface treatments, resulting in interesting mesoscopic transport phenomena such as universal conductance fluctuations or weak antilocalisation. However, for nanoscaled magnetoelectronic or spintronic applications, nanowires with adjustable ferromagnetic properties are desirable. As the growth of dilute magnetic semiconductors and semiconducting nanowires with a Curie temperature above 300 K is still challenging, MnAs/InAs heterojunction nanowires, where ferromagnetic nanoclusters are embedded in a semiconducting matrix, may represent a promising alternative. Additionally, such heterojunction nanowires have been reported to exhibit huge magnetoresistance effects as well as a relatively long spin-relaxation time.